ALEXANDRIA, Va., June 16 -- United States Patent no. 12,310,139, issued on May 20, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Semiconductor devices with single-photon avalanche diodes and isolation structures" was invented by Jeffrey Peter Gambino (Gresham, Ore.), David T. Price (Gresham, Ore.), Marc Allen Sulfridge (Boise, Idaho), Richard Mauritzson (Meridian, Idaho), Michael Gerard Keyes (Dromcollogher, Ireland), Ryan Rettmann (Hopewell Junction, N.Y.) and Kevin Mcstay (Hopewell Junction, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An imaging device may include single-photon avalanche diodes (SPADs). To mitigate crosstalk, isolation structures may be formed around...