US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on May 13 for "Moat coverage with dielectric film for device passivation and singulation" (Malaysian Inventor)

ALEXANDRIA, Va., June 12 -- United States Patent no. 12,300,548, issued on May 13, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Moat coverage with dielectric film for device passivation and singulation" was invented by Mark Anand Thomas (Seremban, Malaysia).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques are described for the use of moats for isolating and singulating semiconductor devices formed on a wafer. Described techniques use dielectric films, such as an oxide-nitride film, to coat moat surfaces and provide passivation. The dielectric films may form a junction with a metal contact layer, to reduce electrical overstress that may otherwise occur in the resulting...