ALEXANDRIA, Va., March 26 -- United States Patent no. 12,262,557, issued on March 25, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Methods and systems to improve uniformity in power FET arrays" was invented by Clifford Drowley (Santa Clara, Calif.), Andrew P. Edwards (Santa Clara, Calif.), Hao Cui (Santa Clara, Calif.) and Subhash Srinivas Pidaparthi (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical, fin-based field effect transistor (FinFET) device includes an array of individual FinFET cells. The array includes a plurality of rows and columns of separated fins. Each of the separated fins is in electrical communication with a source contact. The ...