US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on June 17 for "Method and system for etch depth control in III-V semiconductor devices" (California Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,352, issued on June 17, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Method and system for etch depth control in III-V semiconductor devices" was invented by Wayne Chen (Santa Clara, Calif.), Andrew P. Edwards (Santa Clara, Calif.), Clifford Drowley (Santa Clara, Calif.) and Subhash Srinivas Pidaparthi (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing a vertical FET device includes providing a semiconductor substrate structure including a marker layer; forming a hardmask layer coupled to the semiconductor substrate structure, wherein the hardmask layer comprises a set of op...