US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Jan. 13 for "Negative charge extraction structure for edge termination" (California Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,527,028, issued on Jan. 13, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Negative charge extraction structure for edge termination" was invented by Kyoung Wook Seok (Santa Clara, Calif.), Clifford Drowley (Santa Clara, Calif.), Andrew J. Walker (Santa Clara, Calif.) and Andrew P. Edwards (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A gallium nitride (GaN) power device includes a GaN substrate structure having a first surface and a second surface, a metallic layer coupled to the second surface of the GaN substrate structure, and an active region including an array of vertical fin-based field effect ...