US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Feb. 10 for "Power transistors with resonant clamping circuits" (Belgian, American Inventors)

ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,549,103, issued on Feb. 10, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Power transistors with resonant clamping circuits" was invented by Jaume Roig-Guitart (Oudenaarde, Belgium) and Dean E. Probst (West Jordan, Utah).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a general aspect, a circuit includes a metal-oxide semiconductor field-effect transistor (MOSFET) having a gate, a source, and a drain. The MOSFET has a first breakdown voltage. The circuit also includes a clamping circuit coupled between the drain and the source. The clamping circuit including a diode having a second breakdown voltage that is less than the...