ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,550,754, issued on Feb. 10, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).
"Current sharing mismatch reduction in power semiconductor device modules" was invented by Oseob Jeon (Seoul, South Korea), Seungwon Im (Bucheon, South Korea), Rajani Kumar Thirukoluri (Munich) and Roveendra Paul (Dublin, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "In a general aspect, a power module includes a substrate having first, second and third patterned metal layers disposed on a surface of the substrate. The module also includes a first high-side transistor disposed on the first patterned metal layer, a second high-side transistor ...