US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on Dec. 16 for "Power device with graded channel" (South Korean, American, German Inventors)

ALEXANDRIA, Va., Dec. 16 -- United States Patent no. 12,501,649, issued on Dec. 16, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Power device with graded channel" was invented by Kevin Kyuheon Cho (Bucheon, South Korea), Bongyong Lee (Seoul, South Korea), Kyeongseok Park (Bucheon, South Korea), Doojin Choi (Gimpo, South Korea), Thomas Neyer (Munich) and James Joseph Victory (Trabuco Canyon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A power device includes a silicon carbide substrate. A gate is provided on a first side of the silicon carbide substrate. A graded channel includes a first region having a first dopant concentration and a second region having a second d...