ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,566, issued on April 8, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).
"Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods" was invented by Ali Salih (Mesa, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Systems and methods of the disclosed embodiments include reducing defects in a semiconductor layer. The defects may be reduced by forming the semiconductor layer on a substrate, removing at least a portion the substrate from an underside of the semiconductor layer, and annealing the semiconductor layer to reduce the defects in the layer. The annealing includes focusing...