US Patent Issued to SEMICONDUCTOR COMPONENTS INDUSTRIES on April 15 for "Reverse recovery charge reduction in semiconductor devices" (Arizona, Utah Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,278,266, issued on April 15, was assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES LLC (Scottsdale, Ariz.).

"Reverse recovery charge reduction in semiconductor devices" was invented by Shengling Deng (Chandler, Ariz.), Dean E. Probst (West Jordan, Utah) and Zia Hossain (Tempe, Ariz.).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a general aspect, a method can include forming well region of one conductivity type in a semiconductor region of another conductivity type An interface between the well region and the semiconductor region can define a diode junction at a depth below an upper surface of the semiconductor region. The method can further include for...