ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,410,368, issued on Sept. 9, was assigned to SEMES Co. LTD. (Chungcheongnam-Do, South Korea).

"Etching gas composition, substrate processing apparatus, and pattern forming method using the etching gas composition" was invented by Kyungseok Min (Suwon-si, South Korea), Sukjune An (Seongnam-si, South Korea) and Donggung Shin (Cheonan-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etching gas composition includes at least two C3 or C4 organic fluorine compounds and niobium fluoride, and the at least two C3 or C4 organic fluorine compounds are isomers."

The patent was filed on June 16, 2023, under Application No. 18/336,070.

*For furthe...