US Patent Issued to SEMES on Oct. 21 for "Method of forming pattern structure including silicon nitride" (South Korean Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,448,680, issued on Oct. 21, was assigned to SEMES Co. LTD. (Chungcheongnam-Do, South Korea).

"Method of forming pattern structure including silicon nitride" was invented by Jihoon Park (Chungcheongnam-do, South Korea), Wan Jae Park (Chungcheongnam-do, South Korea), Seong Gil Lee (Chungcheongnam-do, South Korea), Dong Sub Oh (Chungcheongnam-do, South Korea), Hye Joon Kheel (Chungcheongnam-do, South Korea), Yun Woo Kim (Chungcheongnam-do, South Korea) and Da Yeong Jeong (Chungcheongnam-do, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a method of forming a pattern structure including a silicon nitride. According to the embodimen...