ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,358, issued on Oct. 21, was assigned to SEMES Co. LTD. (Chungcheongnam-Do, South Korea).
"Method for fabricating semiconductor device and apparatus for processing substrate using plasma" was invented by Joun Taek Koo (Seoul, South Korea), Seong Gil Lee (Gyeonggi-do, South Korea), Wan Jae Park (Gyeonggi-do, South Korea), Young Je Um (Busan, South Korea), Dong Hun Kim (Seoul, South Korea), Ji Hwan Lee (Incheon, South Korea), Dong Sub Oh (Busan, South Korea), Myoung Sub Noh (Gyeonggi-do, South Korea) and Du Ri Kim (Incheon, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of fabricating a semiconductor device with improved electrical...