ALEXANDRIA, Va., June 18 -- United States Patent no. 12,327,789, issued on June 10, was assigned to SEIKO EPSON Corp. (Tokyo).
"Semiconductor device" was invented by Masahiko Tsuchiya (Suwa, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor substrate of a first conductivity type; a first impurity layer of a second conductivity type formed at a surface of the semiconductor substrate; a second impurity layer of a first conductivity type formed to surround the first impurity layer of the semiconductor substrate; an insulating film configured to cover at least the first impurity layer; a resistive element provided on the insulating film and having a spiral shap...