ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,399, issued on Dec. 9, was assigned to SEIKO EPSON Corp. (Tokyo).
"Method for manufacturing semiconductor device" was invented by Koichi Mizugaki (Suwa, Japan), Tomoyuki Kamakura (Matsumoto, Japan) and Yasuke Matsuzawa (Chino, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a first through hole penetrating from a first surface to a second surface of a semiconductor substrate; forming a second insulating film at the first surface of the semiconductor substrate and a side surface of the first through hole; disposing a resist at a surface of the second insulating film from the firs...