ALEXANDRIA, Va., Feb. 26 -- United States Patent no. 12,239,028, issued on Feb. 25, was assigned to SeeQC Inc. (Elmsford, N.Y.).
"Memory cells based on superconducting and magnetic materials and methods of their control in arrays" was invented by Ivan Nevirkovets (Evanston, Ill.) and Oleg Mukhanov (Putnam Valley, N.Y.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell having a Josephson junction and a magnetic junction in close proximity. The two junctions may be vertically integrated. The magnetic junction has at least two magnetic layers with different coercive forces and a non-magnetic layer therebetween, to form a spin valve or pseudo-spin valve. A magnetization direction of a magnetic layer wi...