ALEXANDRIA, Va., Oct. 21 -- United States Patent no. 12,444,612, issued on Oct. 14, was assigned to SCREEN Holdings Co. Ltd. (Japan).

"Substrate processing method and substrate processing apparatus" was invented by Kazuki Nishihara (Kyoto, Japan), Yuya Akanishi (Kyoto, Japan) and Masaki Inaba (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a substrate processing method, a silicon oxide film formed on a substrate is etched. The substrate processing method includes a first etching step and a second etching step. In the first etching step, the silicon oxide film is selectively etched against another film by supplying a hydrogen fluoride gas into a chamber in a state in which a pressure in the ch...