ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,433,012, issued on Sept. 30, was assigned to SANKEN ELECTRIC Co. LTD. (Niiza, Japan).
"Semiconductor device" was invented by Masayuki Hanaoka (Niiza, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to one or more embodiment may include: an IGBT region including a first semiconductor region of a first conductivity type; a second semiconductor region of a second conductivity type arranged on the first semiconductor region; a third semiconductor region of the first conductivity type arranged on the second semiconductor region; a fourth semiconductor region of the second conductivity type arranged on the first semicond...