US Patent Issued to Sandisk Technologies on Sept. 9 for "Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement" (Japanese, American Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,296, issued on Sept. 9, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement" was invented by Yusuke Mukae (Nagoya, Japan), Naoki Takeguchi (Nagoya, Japan), Yujin Terasawa (Yokkaichi, Japan), Tatsuya Hinoue (Yokkaichi, Japan) and Ramy Nashed Bassely Said (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate, forming a memory opening extending thro...