US Patent Issued to Sandisk Technologies on Sept. 9 for "Cross-point magnetoresistive memory array including self-aligned dielectric spacers and method of making thereof" (California Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,414,307, issued on Sept. 9, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Cross-point magnetoresistive memory array including self-aligned dielectric spacers and method of making thereof" was invented by Jordan Katine (Mountain View, Calif.) and Lei Wan (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Selector material layers are formed over the first electrically conductive lines, and magnetic tunnel junction material layers are formed over the selector material layers. The magnetic tunnel junction material layers are patterned into a two-dimensional array of magnetic tunnel junction (MTJ) pillar structures. A dielectr...