US Patent Issued to Sandisk Technologies on Sept. 23 for "Field effect transistors with reduced gate fringe area and method of making the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,426,354, issued on Sept. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Field effect transistors with reduced gate fringe area and method of making the same" was invented by Takahito Fujita (Yokkaichi, Japan), Kiyokazu Shishido (Yokkaichi, Japan) and Hiroyuki Ogawa (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes at least two field effect transistors. A gate strip including a plurality of gate dielectrics and a gate electrode strip can be formed over a plurality of semiconductor active regions. Deep source/drain regions are formed by implanting dopants into semiconductor active regions...