ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,295, issued on Sept. 23, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Evolving bad block detection in non-volatile memory" was invented by Abhijith Prakash (Milpitas, Calif.), Parth Amin (Livermore, Calif.) and Xiang Yang (Santa Clara, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "Technology is disclosed herein for detecting evolved bad blocks in three-dimensional NAND. The test may include a drain side erase that includes applying an erase voltage from the bit lines and a source side erase that includes applying an erase voltage from the source line(s). If the source side erase performed worse than the drain side erase th...