US Patent Issued to Sandisk Technologies on Sept. 2 for "Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,408,335, issued on Sept. 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same" was invented by Michiaki Sano (Yokkaichi, Japan), Koichi Ito (Yokkaichi, Japan) and Takuya Mori (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, where the electrically conductive layers include word lines and drain select gate electrodes that contain plurality of drain-select-l...