US Patent Issued to Sandisk Technologies on Sept. 2 for "Non-volatile memory with smart control of overdrive voltage" (California Inventors)

ALEXANDRIA, Va., Sept. 3 -- United States Patent no. 12,406,743, issued on Sept. 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with smart control of overdrive voltage" was invented by Yi Song (San Jose, Calif.), Jiahui Yuan (Fremont, Calif.), Xiaochen Zhu (Milpitas, Calif.) and Lito De La Rama (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory system detects a memory operation failure. In response to the memory operation failure, the system determines whether adjusting an overdrive voltage applied to a word line avoids the memory operation failure. If adjusting the overdrive voltage applied to the word line avoids the memory operatio...