US Patent Issued to Sandisk Technologies on Oct. 7 for "Non-volatile memory with slow voltage ramp compensation" (California Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,831, issued on Oct. 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with slow voltage ramp compensation" was invented by Sai Gautham Thoppa (San Jose, Calif.), Parth Amin (Livermore, Calif.) and Long Pham (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Non-volatile memory cells are programmed by raising a voltage applied to a selected word line to a program voltage during a first time period of a programming process for selected non-volatile memory cells connected to the selected word line; programming the selected non-volatile memory cells using the program voltage during a second time period a...