US Patent Issued to Sandisk Technologies on Oct. 7 for "Delayed select gate ramp-up for peak read current consumption reduction for non-volatile memory apparatus" (California Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,437,815, issued on Oct. 7, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Delayed select gate ramp-up for peak read current consumption reduction for non-volatile memory apparatus" was invented by Abhijith Prakash (Milpitas, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes source-side and drain-side select gate transistors for coupling respectively to the source-side and drain-side of memory holes of memory cells. During the read operation, the control means ramps the word lines to a read pass voltage. The control mean...