US Patent Issued to Sandisk Technologies on Oct. 28 for "Three-dimensional memory device with multilevel drain-select electrodes and methods for forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,686, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device with multilevel drain-select electrodes and methods for forming the same" was invented by Akihiro Tobioka (Yokkaichi, Japan) and Satoshi Shimizu (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, where the electrically conductive layers include word-line-level electrically conductive layers and drain-select-level electrically conductive layers located above the word-line-level electrically conductive...