US Patent Issued to Sandisk Technologies on Oct. 28 for "Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same" (Japanese, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,737, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing on-pitch drain select level structures and methods of making the same" was invented by Kanta Watanabe (Yokkaichi, Japan) and Yanli Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and word-line-level electrically conductive layers, a vertical layer stack located over the alternating stack, and including multiple levels of vertically interlaced drain select electrodes and drain-select-level insulating layers, a first ...