ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,735, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same" was invented by Yusuke Yoshida (Yokkaichi, Japan), Teruo Okina (Yokkaichi, Japan) and Kenichi Okabe (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers that is located on a front side of at least one semiconductor material layer; memory openings vertically extending through the alternating stack; memory opening fill...