ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,736, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Three-dimensional memory device containing etch stop metal plates for backside via structures and methods for forming the same" was invented by Hiroaki Namba (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers that is located on a front side of at least one semiconductor material layer; memory openings vertically extending through the alternating stack; memory opening fill structures; a dielectric material portion contacting sidewalls of the...