US Patent Issued to Sandisk Technologies on Oct. 28 for "Three-dimensional memory device containing engineered charge storage elements and methods for forming the same" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,738, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device containing engineered charge storage elements and methods for forming the same" was invented by Rahul Sharangpani (Fremont, Calif.), Raghuveer S. Makala (Campbell, Calif.), Adarsh Rajashekhar (Santa Clara, Calif.) and Fei Zhou (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory openin...