ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,527, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Reconfigurable lines in different sub-block modes in a NAND memory device" was invented by Wei Cao (Fremont, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block with memory cells that are arranged in word lines, some of which are reconfigurable word lines that are dummy word lines when the memory block is operating in a one bit per cell mode and are data word lines when the memory block is operating in a multiple bits per cell mode. Circuitry is configured to program the memory cells ...