US Patent Issued to Sandisk Technologies on Oct. 28 for "Non-volatile memory with efficient setting of initial program voltage" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,535, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with efficient setting of initial program voltage" was invented by Wei Cao (Fremont, Calif.), Jiahui Yuan (Fremont, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "While programming a first set of memory cells, a non-volatile memory apparatus determines an initial magnitude of a programming signal for a second set of memory cells based on testing during the programming of the first set of memory cells. The testing comprises sensing at a first test voltage level and sensing at a second test voltage leve...