US Patent Issued to Sandisk Technologies on Oct. 28 for "High voltage field effect transistors with different sidewall spacer configurations and method of making the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,457,786, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"High voltage field effect transistors with different sidewall spacer configurations and method of making the same" was invented by Masashi Ishida (Yokkaichi, Japan), Hiroyuki Ogawa (Nagoya, Japan), Kiyokazu Shishido (Yokkaichi, Japan), Kazutaka Yoshizawa (Yokkaichi, Japan) and Yasuyuki Aoki (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first field effect transistor including a first gate spacer having first laterally-straight bottom edges that coincide with top edges of first laterally-straight sidewalls of t...