US Patent Issued to Sandisk Technologies on Oct. 28 for "High aspect ratio via fill process employing selective metal deposition and structures formed by the same" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,688, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"High aspect ratio via fill process employing selective metal deposition and structures formed by the same" was invented by Takashi Yamaha (Obu, Japan), Tatsuya Hinoue (Yokkaichi, Japan) and Fumitaka Amano (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A metal interconnect assembly includes a first metal interconnect structure, and a second metal interconnect structure embedded in a second dielectric material layer and containing a metal line portion having a top surface located within a first horizontal plane and having a bottom surface located w...