US Patent Issued to Sandisk Technologies on Oct. 28 for "Asymmetric VREADK to reduce neighboring word line interference in a memory device" (California Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,519, issued on Oct. 28, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Asymmetric VREADK to reduce neighboring word line interference in a memory device" was invented by Dengtao Zhao (Los Gatos, Calif.), Xiang Yang (Santa Clara, Calif.) and Peng Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes a memory block with a plurality of memory cells that are arranged in a plurality of word lines. The plurality of word lines include a selected word line, a pair of neighboring word lines that are immediately adjacent the selected word line, and a plurality of non-neighboring word lines that are n...