US Patent Issued to Sandisk Technologies on Oct. 21 for "Non-volatile memory that dynamically reduces the number of bits of data stored per memory cell" (Chinese, American Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,449,981, issued on Oct. 21, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory that dynamically reduces the number of bits of data stored per memory cell" was invented by Liang Li (Shanghai), Jiahui Yuan (Fremont, Calif.) and Loc Tu (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory system reduces the number of bits of data per non-volatile memory cell for a block (or other grouping of non-volatile memory cells) in response to a failed memory operation, the block being subjected to more than a minimum number of programming cycles or other events. The reducing of the number of bits of da...