US Patent Issued to Sandisk Technologies on Nov. 4 for "Reducing read disturb in a semi-circular memory cell of a memory device" (Chinese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,883, issued on Nov. 4, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Reducing read disturb in a semi-circular memory cell of a memory device" was invented by Will Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "The memory device includes an array of split-gate cells with first memory cells and second memory cells that can operate independently of one another and are arranged in first side-strings and second-side strings respectively. Control circuitry is configured to perform a sensing operation on a selected first memory cell to detect its threshold voltage. During the sensing operation, the control circuitry applies a r...