ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,462,888, issued on Nov. 4, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Non-volatile memory with neighbor plane program disturb avoidance" was invented by Jiahui Yuan (Fremont, Calif.) and Lito De La Rama (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory system tests for a voltage leak in any of multiple planes using a voltage being ramped up on selected word lines in the multiple planes. If no voltage leak is detected, then the system concurrently programs data into memory cells connected to the selected word lines in the multiple planes. If a voltage leak is detected in any of the planes, then the ...