ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,461,653, issued on Nov. 4, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Fast look ahead read for non-volatile memory by removing pre-read redundancy" was invented by Xiaojia Jia (San Jose, Calif.) and Chin-Yi Chen (San Jose, Calif.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus and method of operation are provided. The apparatus includes memory cells connected to word lines. The memory cells are disposed in strings and are configured to retain a threshold voltage corresponding to one of a plurality of data states. A control means determines data states for memory cells of at least one word line of the word lines in a ...