US Patent Issued to Sandisk Technologies on Nov. 25 for "Three-dimensional memory device including composite backside metal fill structures" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,224, issued on Nov. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including composite backside metal fill structures" was invented by Ryo Kambayashi (Yokkaichi, Japan) and Kazuto Ohsawa (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three dimensional memory device includes: an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings, and a backside trench fill structure that includes a backside trench insulating spacer and a backsid...