ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,484,222, issued on Nov. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening" was invented by Rahul Sharangpani (Fremont, Calif.), Raghuveer S. Makala (Campbell, Calif.), Adarsh Rajashekhar (Santa Clara, Calif.), Fei Zhou (San Jose, Calif.), Bing Zhou (San Jose, Calif.), Senaka Kanakamedala (San Jose, Calif.), Roshan Jayakhar Tirukkonda (Milpitas, Calif.) and Kartik Sondhi (Milpitas, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory device includes forming an alternati...