US Patent Issued to Sandisk Technologies on Nov. 25 for "Non-volatile memory with adjustable ramp rate" (California Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,532, issued on Nov. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with adjustable ramp rate" was invented by Sai Gautham Thoppa (San Jose, Calif.), Parth Amin (Livermore, Calif.) and Long Pham (San Ramon, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory comprises a non-volatile memory structure that includes non-volatile memory cells. The non-volatile memory adjusts a ramp rate of a voltage signal applied to the non-volatile memory structure as part of a memory operation for the non-volatile memory cells. The adjusting the ramp rate is performed during the ramping up of the voltage ...