US Patent Issued to Sandisk Technologies on Nov. 25 for "Gate-induced drain leakage pre-charge in sub-block mode for three or more tier non-volatile memory structure" (California Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,482,528, issued on Nov. 25, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Gate-induced drain leakage pre-charge in sub-block mode for three or more tier non-volatile memory structure" was invented by Peng Zhang (San Jose, Calif.) and Yanli Zhang (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus includes memory cells connected to word lines and disposed in strings each defining a channel and coupled to bit lines and a source line. The memory cells are configured to retain a threshold voltage corresponding to data states. A control means is configured to apply programming pulses followed by verification pulses ...