US Patent Issued to Sandisk Technologies on Nov. 18 for "Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the same" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,192, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Three-dimensional memory device including a drain contact etch-stop dielectric layer and methods for forming the same" was invented by Ryo Nakamura (Yokkaichi, Japan) and Naohiro Hosoda (Yokkaichi, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers, a composite insulating cap layer located over the alternating stack, memory openings vertically extending through the composite insulating cap layer and the alternating stack, and memory opening fil...