ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,476,186, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).
"Three-dimensional memory device containing integrated contact-and-support assemblies and methods of making the same" was invented by Masato Miyamoto (Yokkaichi, Japan), Hiroyuki Ogawa (Yokkaichi, Japan) and Tomohiro Kubo (Yokkaichi, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures including a vertical channel and memory elements located in the memory o...