US Patent Issued to Sandisk Technologies on Nov. 18 for "Self-learning built-in self-test (BIST) for leak detection in non-volatile memory" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,968, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Self-learning built-in self-test (BIST) for leak detection in non-volatile memory" was invented by Cuili Fu (Shanghai), Wenkai Liu (Shanghai), Xiaohu Liu (Shanghai) and Liang Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a word line leakage detection process in a NAND or other non-volatile memory device, to determine leaky blocks of a memory device, a reference value for block is determined by comparing the current drawn by the peripheral circuitry of the block with a sequence of comparison current values, corresponding to a range of digital value...