US Patent Issued to Sandisk Technologies on Nov. 18 for "Non-volatile memory with sub-block programming" (Chinese Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,957, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with sub-block programming" was invented by Ming Wang (Shanghai) and Liang Li (Shanghai).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory includes non-volatile memory cells divided into blocks, bit lines connected to the blocks, and a source line connected to the blocks. Each block includes multiple sub-blocks. Each sub-block includes multiple source side Gate Induced Drain Leakage ("GIDL") generation transistors that are closer to the source line than the bit lines. GIDL generation transistors for each sub-block can be contr...