US Patent Issued to Sandisk Technologies on Nov. 18 for "Non-volatile memory with efficient precharge in sub-block mode" (California Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,949, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with efficient precharge in sub-block mode" was invented by Wei Cao (Fremont, Calif.), Dengtao Zhao (Los Gatos, Calif.), Peng Zhang (San Jose, Calif.) and Xiang Yang (Santa Clara, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A block of non-volatile memory cells is divided into a first sub-block and a second sub-block. Programming non-volatile memory cells of the second sub-block after programming non-volatile memory cells of the first sub-block comprises boosting unselected channels in the second sub-block to a boosted condition; prior...