US Patent Issued to Sandisk Technologies on Nov. 18 for "Non-volatile memory with decline state operation" (Chinese, American Inventors)

ALEXANDRIA, Va., Nov. 18 -- United States Patent no. 12,475,958, issued on Nov. 18, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Non-volatile memory with decline state operation" was invented by Liang Li (Shanghai), Ming Wang (Shanghai) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A non-volatile memory is configured to transition memory cells from programmed data states with the higher ranges of threshold voltages to programmed data states with the lower ranges of threshold voltages without the transitioning the memory cells to the erased data state."

The patent was filed on July 29, 2023, under Application No. 18/361,841.

*For further information, inclu...